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Articles 3571 - 3600 of 3840
Full-Text Articles in Physical Sciences and Mathematics
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 11, Number 4, April 1995, College Of Engineering And Computer Science, Wright State University
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 11, Number 4, April 1995, College Of Engineering And Computer Science, Wright State University
BITs and PCs Newsletter
A twelve page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 11, Number 3, March 1995, College Of Engineering And Computer Science, Wright State University
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 11, Number 3, March 1995, College Of Engineering And Computer Science, Wright State University
BITs and PCs Newsletter
A fourteen page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 11, Number 2, February 1995, College Of Engineering And Computer Science, Wright State University
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 11, Number 2, February 1995, College Of Engineering And Computer Science, Wright State University
BITs and PCs Newsletter
An eighteen page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.
Principal Points And Self-Consistent Points Of Elliptical Distributions, Thaddeus Tarpey, Luning Li, Bernard Flury
Principal Points And Self-Consistent Points Of Elliptical Distributions, Thaddeus Tarpey, Luning Li, Bernard Flury
Mathematics and Statistics Faculty Publications
In this paper we study principal points and self-consistent points of p-variate elliptical distributions. We also discuss implications of our results for the computation and estimation of principal points.
Convenient Determination Of Concentration And Energy In Deep-Level Transient Spectroscopy, David C. Look, Z-Q. Fang, J. R. Sizelove
Convenient Determination Of Concentration And Energy In Deep-Level Transient Spectroscopy, David C. Look, Z-Q. Fang, J. R. Sizelove
Physics Faculty Publications
For defects or impurities with deep energy levels, such as the commonly observed EL2, EL3, and EL6 in GaAs, it is very important to take account of the so‐called λ effect in order to deduce the correct concentrations of these centers when using capacitance techniques. By measuring capacitance at several forward bias voltages for a given reverse bias voltage it is possible to determine concentration NT and energy ET without requiring the usual emission rate analysis. Convenient formulas for NT and ET are given, although only NT can be determined with a high degree of …
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 11, Number 1, January 1995, College Of Engineering And Computer Science, Wright State University
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 11, Number 1, January 1995, College Of Engineering And Computer Science, Wright State University
BITs and PCs Newsletter
A fourteen page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.
Singularity Of Super-Brownian Local Time At A Point Catalyst, Donald A. Dawson, Klaus Fleischmann, Yi Li, Carl Mueller
Singularity Of Super-Brownian Local Time At A Point Catalyst, Donald A. Dawson, Klaus Fleischmann, Yi Li, Carl Mueller
Mathematics and Statistics Faculty Publications
No abstract provided.
A Theoretical Study Concerning The Solar Cycle Dependence Of The Nightside Ionosphere Of Venus, Zoltan Dobe, Andrew F. Nagy, Jane L. Fox
A Theoretical Study Concerning The Solar Cycle Dependence Of The Nightside Ionosphere Of Venus, Zoltan Dobe, Andrew F. Nagy, Jane L. Fox
Physics Faculty Publications
We modeled the chemical and physical processes taking place in the nightside ionosphere of Venus by solving the one dimensional coupled continuity and momentum equations for 12 ion species [CO2+, O2+, O+, H+, NO+, CO+, N2+, N+, He+, C+, O+ (²D) and O+ (²P)]. We investigated the relative importance of the two major processes responsible for maintaining the nightside plasma densities: atomic ion transport from the dayside and impact ionization due to energetic electron precipitation. …
Monte-Carlo Simulation Of Bulk Hole Transport In Alxga1-Xas, In1-Xalxas, And Gaasxsb1-X, M. J. Martinez, David C. Look, J. R. Sizelove, F. L. Schuermeyer
Monte-Carlo Simulation Of Bulk Hole Transport In Alxga1-Xas, In1-Xalxas, And Gaasxsb1-X, M. J. Martinez, David C. Look, J. R. Sizelove, F. L. Schuermeyer
Physics Faculty Publications
We report a Monte Carlo study of hole transport in AlxGa1−xAs, In1−xAlxAs, and GaAsxSb1−x. The effects of alloy scattering are significant in all three cases, but mobilities are still high enough to be advantageous in particular device applications. We separately calculate the Hall r factors by a Boltzmann transport method and show that these factors are vitally important when attempting to compare Monte Carlo drift mobilities with experimental Hall data.
Demonstration Of Semiconductor Characterization By Phonon Side-Band In Photoluminescence, D. C. Reynolds, David C. Look, D. N. Talwar, G. L. Mccoy, K. R. Evans
Demonstration Of Semiconductor Characterization By Phonon Side-Band In Photoluminescence, D. C. Reynolds, David C. Look, D. N. Talwar, G. L. Mccoy, K. R. Evans
Physics Faculty Publications
In this paper two GaAs samples were investigated; one was a very pure sample grown by chemical-vapor deposition, the other was grown by molecular-beam epitaxy. The dominant optical transition in the high-purity sample was the donor-bound-exciton transition. Phonon sidebands associated with both the free exciton and the donor-bound exciton were observed. The active phonons were the longitudinal-optical (LO) and the transverse-optical (TO) modes associated with both the free exciton and the donor-bound exciton at the Γ point in k space; the TO mode from the donor-bound exciton at the X point, the LO from the free exciton at the L …
Nonrecursive Incremental Evaluation Of Datalog Queries, Guozhu Dong, Jianwen Su, Rodney Topor
Nonrecursive Incremental Evaluation Of Datalog Queries, Guozhu Dong, Jianwen Su, Rodney Topor
Kno.e.sis Publications
We consider the problem of repeatedly evaluating the same (computationally expensive) query to a database that is being updated between successive query requests. In this situation, it should be possible to use the difference between successive database states and the answer to the query in one state to reduce the cost of evaluating the query in the next state. We use nonrecursive Datalog (which are unions of conjunctive queries) to compute the differences, and call this process “incremental query evaluation using conjunctive queries”. After formalizing the notion of incremental query evaluation using conjunctive queries, we give an algorithm that constructs, …
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 10, Number 10, December 1994, College Of Engineering And Computer Science, Wright State University
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 10, Number 10, December 1994, College Of Engineering And Computer Science, Wright State University
BITs and PCs Newsletter
A fourteen page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.
Electron Energy Loss In Oxygen Plasmas, G. A. Victor, John C. Raymond, Jane L. Fox
Electron Energy Loss In Oxygen Plasmas, G. A. Victor, John C. Raymond, Jane L. Fox
Jane L. Fox
The results of calculations of the energy deposition of energetic electrons in oxygen plasmas are given. In a pure oxygen plasma even with large fractional ionization, much of the electron energy results in the production of additional ionization and excited electronic states. Results are given for separate calculations using theoretical and experimental cross sections for the important O I excitations of 1S and 1D because the theoretical and experimental data are not in agreement. These results are useful for understanding the spectra of oxygen-rich supernova remnants.
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 10, Number 9, November 1994, College Of Engineering And Computer Science, Wright State University
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 10, Number 9, November 1994, College Of Engineering And Computer Science, Wright State University
BITs and PCs Newsletter
A fourteen page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.
Interaction Of A Group Of Dislocations Within The Framework Of The Continuum Frenkel-Kontorova Model, Naum I. Gershenzon
Interaction Of A Group Of Dislocations Within The Framework Of The Continuum Frenkel-Kontorova Model, Naum I. Gershenzon
Physics Faculty Publications
The Frenkel-Kontorova (FK) model of edge dislocation is analyzed. Solutions of the continuum limit of the FK model [the sine-Gordon (SG) equation] are obtained in a form convenient for investigation of dynamics of a large number of interacting dislocations. We consider, based on these solutions, some nonstationary processes: dislocation generation, diffusion of dislocations, and crack-dislocation interaction. Simple relations connecting the velocity of plastic deformation, density and velocity of dislocations, and the force of interaction between dislocations are obtained. The nucleation of dislocations at a moving crack tip is described.
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 10, Number 8, October 1994, College Of Engineering And Computer Science, Wright State University
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 10, Number 8, October 1994, College Of Engineering And Computer Science, Wright State University
BITs and PCs Newsletter
An eight page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.
Student Fact Book, Fall 1994, Wright State University, Office Of Student Information Systems, Wright State University
Student Fact Book, Fall 1994, Wright State University, Office Of Student Information Systems, Wright State University
Wright State University Student Fact Books
The student fact book has general demographic information on all students enrolled at Wright State University for Fall Quarter, 1994.
The "Infoharness" Information Integration Platform, Leon Shklar, Satish Thatte, Howard Marcus, Amit P. Sheth
The "Infoharness" Information Integration Platform, Leon Shklar, Satish Thatte, Howard Marcus, Amit P. Sheth
Kno.e.sis Publications
The "InfoHarness" information integration platform, tools, and services being developed at Bellcore are aimed at providing integrated and rapid access to huge amounts of heterogeneous information independent of the type, representation, and location of information. InfoHarness provides advanced search and browsing capabilities without imposing the burden of restructuring, reformatting or relocating information on information suppliers or creators. This is achieved through object-oriented encapsulation of information and the associated meta-information (e.g., type, location, access rights, owner, creation date, etc.). The meta-information extraction methods ensure rapid and largely automatic creation of information repositories. A gateway that supports access to InfoHarness repositories from …
Nondestructive Mapping Of Carrier Concentration And Dislocation Density In N(+)-Type Gaas, David C. Look, D. C. Walters, M. G. Mier, J. R. Sizelove
Nondestructive Mapping Of Carrier Concentration And Dislocation Density In N(+)-Type Gaas, David C. Look, D. C. Walters, M. G. Mier, J. R. Sizelove
Physics Faculty Publications
Transmission mappings (500 μm×500 μm resolution) at wavelengths of 0.9–1.5 μm on 3 in., n+‐GaAs wafers (n≂1–2×1018 cm-3) correlate well with carrier concentration n, measured by the Hall effect, and dislocation density, as confirmed by KOH etch‐pit patterns. The absorption for λ≳1.0 μm (below band edge) varies directly with n via free‐carrier interconduction‐band transitions, while the absorption for λ≲0.95 μm (near band edge) varies inversely with n because of band‐filling effects. Both phenomena are highly useful for n+‐GaAs wafer characterization.
Diamagnetic Shifts Of Excitons Associated With Symmetrical And Antisymmetric Wave Functions In Coupled Inxga1-Xas-Gaas Quantum Wells, D. C. Reynolds, David C. Look, B. Jogai, C. E. Stutz
Diamagnetic Shifts Of Excitons Associated With Symmetrical And Antisymmetric Wave Functions In Coupled Inxga1-Xas-Gaas Quantum Wells, D. C. Reynolds, David C. Look, B. Jogai, C. E. Stutz
Physics Faculty Publications
Magneto‐optical data obtained from photoluminescence and photoluminescence excitation measurements performed in the presence of applied magnetic fields were used to determine the diamagnetic shifts of free excitons. The samples studied were coupled InxGa1−xAs–GaAs quantum wells. In all cases the excitons associated with antisymmetric wave functions were found to have larger diamagnetic shifts than the excitons associated with symmetric wave functions. This suggests that the excitons associated with antisymmetric wave functions have a smaller binding energy than excitons associated with symmetric wave functions. These properties are consistent with the fact that excitons associated with antisymmetric wave …
Magnetoluminescence Studies In Gaas-Alxga1-Xas Single Heterojunctions - Observation Of Parity-Forbidden Landau-Level Transitions, D. C. Reynolds, David C. Look, B. Jogai, C. E. Stutz, R. Jones, K. K. Bajaj
Magnetoluminescence Studies In Gaas-Alxga1-Xas Single Heterojunctions - Observation Of Parity-Forbidden Landau-Level Transitions, D. C. Reynolds, David C. Look, B. Jogai, C. E. Stutz, R. Jones, K. K. Bajaj
Physics Faculty Publications
We have observed a number of allowed and parity-forbidden Landau-level transitions in a modulation-doped GaAs-AlxGa1-xAs single heterojunction structure using photoluminescence-excitation spectroscopy at 2 K. The GaAs layer in this structure is 5000 Å thick. From the allowed Landau-level transitions we determine the reduced mass of the electron-hole pair to be 0.07me. Using a heavy-hole mass of 0.45me, we determine the average value of the electron effective mass to be 0.084me. From the parity-forbidden transitions where the hole Landau level is the same but the electron Landau levels are different, we …
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 10, Number 7, September 1994, College Of Engineering And Computer Science, Wright State University
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 10, Number 7, September 1994, College Of Engineering And Computer Science, Wright State University
BITs and PCs Newsletter
An eight page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.
Radiative Recombination At The Alxga1-Xas-Gaas Heterostructure Interface By 2-Dimensional Excitons, D. C. Reynolds, David C. Look, B. Jogai, Phil W. Yu, K. Evans, C. E. Stutz, L. Radomsky
Radiative Recombination At The Alxga1-Xas-Gaas Heterostructure Interface By 2-Dimensional Excitons, D. C. Reynolds, David C. Look, B. Jogai, Phil W. Yu, K. Evans, C. E. Stutz, L. Radomsky
Physics Faculty Publications
Radiative recombination from the AlxGa1-xAs-GaAs heterostructure interface was investigated using photoluminescence and photoluminescence-excitation spectroscopy in modulation-doped and undoped samples. This emission is identified as H-band A, resulting from an indirect excitonlike transition in real space. The exciton is made up of a two-dimensional electron in the interface notch and a valence-band hole in the neutral region, having a binding energy of 1.8 meV. The H-band A exciton is directly excited by a free exciton making a vertical transition in real space. H-band A may be a distortion of the vertical direct free exciton in real space …
Deep Traps In Molecular-Beam-Epitaxial Gaas Grown At Low Temperatures, David C. Look, Z-Q. Fang, H. Yamamoto, J. R. Sizelove, M. G. Mier, C. E. Stutz
Deep Traps In Molecular-Beam-Epitaxial Gaas Grown At Low Temperatures, David C. Look, Z-Q. Fang, H. Yamamoto, J. R. Sizelove, M. G. Mier, C. E. Stutz
Physics Faculty Publications
Deep‐level transient spectroscopy has been performed on Si‐doped GaAs layers grown by molecular‐beam epitaxy at substrate temperatures of 400–450 °C. The λ effect is taken into account and overlapping peaks are analyzed numerically. An 0.65 eV electron trap of concentration 2×1016 cm−3 is believed to be related to the AsGa‐associated 0.65 eV Hall‐effect center, and also to the trap EB4 found in electron‐irradiated GaAs.
Evolving Plane Curves By Curvature In Relative Geometries Ii, Michael E. Gage, Yi Li
Evolving Plane Curves By Curvature In Relative Geometries Ii, Michael E. Gage, Yi Li
Mathematics and Statistics Faculty Publications
In this paper we prove the existence of self-similar solutions to the anisotropic curve shortening equation.
Magneto-Hall Characterization Of Delta-Doped Pseudomorphic High-Electron-Mobility Transistor Structures, David C. Look, B. Jogai, C. E. Stutz, R. E. Sherriff, G. C. Desalvo, T. J. Rogers, J. M. Ballingall
Magneto-Hall Characterization Of Delta-Doped Pseudomorphic High-Electron-Mobility Transistor Structures, David C. Look, B. Jogai, C. E. Stutz, R. E. Sherriff, G. C. Desalvo, T. J. Rogers, J. M. Ballingall
Physics Faculty Publications
Conventional Hall‐effect determination of the two‐dimensional electron gas (2DEG) concentration n2D in pseudomorphic high electron mobility transistor structures is invalid because of interference from the highly doped GaAs cap. Furthermore, the usual methods of dealing with this cap‐interference problem, namely, (1) etching off the cap totally, (2) etching the cap until the mobility reaches a maximum, or (3) growing a separate structure with a thin, depleted cap, in general, give n2D values that are too low. However, we show here that magnetic‐field‐dependent Hall (M‐Hall) measurements can separately determine the carrier concentrations and mobilities in the cap and 2DEG …
Remarks On Automorphisms Of Subfactors, Phan Loi
Remarks On Automorphisms Of Subfactors, Phan Loi
Mathematics and Statistics Faculty Publications
We establish certain properties of automorphisms on an inclusion of AFD type II1 factors with finite index and finite depth and discuss their applications to the classification problem of AFD type III subfactors, including a different proof of a result on subfactors with principal graph Dn.
Observation Of A Metastable Defect Transition In Gaas, David C. Look, Z-Q. Fang, J. R. Sizelove
Observation Of A Metastable Defect Transition In Gaas, David C. Look, Z-Q. Fang, J. R. Sizelove
Physics Faculty Publications
We show that the well-known 0.15-eV donor in bulk GaAs quenches under IR-light illumination and that the quenched (metastable) state has an electronic transition energy about 0.14 eV deeper than the ground state and can be observed by temperature-dependent-resistivity and Hall-effect measurements. The quenched state thermally recovers by an Auger-like process at a rate of r=2.3×10-12 nvn exp(-0.18/kT). Many of the properties exhibited by this donor are similar to those predicted theoretically for the complex defect AsGa-VAs.
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 10, Number 6, June 1994, College Of Engineering And Computer Science, Wright State University
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 10, Number 6, June 1994, College Of Engineering And Computer Science, Wright State University
BITs and PCs Newsletter
A ten page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 10, Number 5, May 1994, College Of Engineering And Computer Science, Wright State University
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 10, Number 5, May 1994, College Of Engineering And Computer Science, Wright State University
BITs and PCs Newsletter
A twelve page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.