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Articles 3631 - 3660 of 3840
Full-Text Articles in Physical Sciences and Mathematics
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 6, June 1993, College Of Engineering And Computer Science, Wright State University
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 6, June 1993, College Of Engineering And Computer Science, Wright State University
BITs and PCs Newsletter
A ten page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.
Donor And Acceptor Concentrations In Molecular-Beam Epitaxial Gaas Grown At 300-Degrees-C And 400-Degrees-C, David C. Look, G. D. Robinson, J. R. Sizelove, C. E. Stutz
Donor And Acceptor Concentrations In Molecular-Beam Epitaxial Gaas Grown At 300-Degrees-C And 400-Degrees-C, David C. Look, G. D. Robinson, J. R. Sizelove, C. E. Stutz
Physics Faculty Publications
The first Hall‐effect measurements on molecular beam epitaxial GaAs layers grown at the low temperatures of 300 and 400 °C are reported. Two independent methods were used to determine donor ND and acceptor NA concentrations and activation energy ED0, with the following combined results: ND≂3±1×1018, NA≂1.5±1×1017 cm−3, and ED0=0.645±0.009 eV for the 300 °C layer; ND≂2±1×1017, NA≂7±3×1016 cm−3, and ED0=0.648±0.003 eV for the 400 °C layer. Thus, the deep donor is …
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 5, May 1993, College Of Engineering And Computer Science, Wright State University
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 5, May 1993, College Of Engineering And Computer Science, Wright State University
BITs and PCs Newsletter
An eight page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.
Photoquenching And Thermal Recovery Of A Thermally Stimulated Current Peak In Semi-Insulating Gaas, Z-Q. Fang, David C. Look
Photoquenching And Thermal Recovery Of A Thermally Stimulated Current Peak In Semi-Insulating Gaas, Z-Q. Fang, David C. Look
Physics Faculty Publications
A prominent thermally stimulated current peak T5 appearing in semi‐insulating GaAs is shown to photoquench under infrared illumination, and then thermally recover at a rate r=2.0×108 exp(−0.26 eV/kT) s−1, exactly the same as that observed for EL2, within experimental error. Two possible explanations exist: (1) T5 and EL2 are microscopically very similar, probably each with an AsGa core; or (2) T5 is an electron trap that only appears to quench and recover with EL2 because EL2 controls the electron lifetime. Several other traps show similar quenching and recovery behavior.
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 4, April 1993, College Of Engineering And Computer Science, Wright State University
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 4, April 1993, College Of Engineering And Computer Science, Wright State University
BITs and PCs Newsletter
An eight page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 3, March 1993, College Of Engineering And Computer Science, Wright State University
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 3, March 1993, College Of Engineering And Computer Science, Wright State University
BITs and PCs Newsletter
A twelve page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 2, February 1993, College Of Engineering And Computer Science, Wright State University
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 2, February 1993, College Of Engineering And Computer Science, Wright State University
BITs and PCs Newsletter
A fourteen page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.
The Full Group Of A Countable Measurable Equivalence Relation, Richard Mercer
The Full Group Of A Countable Measurable Equivalence Relation, Richard Mercer
Mathematics and Statistics Faculty Publications
We study the group of all ''R-automorphisms'' of a countable equivalence relation R on a standard Borel space, special Borel automorphisms whose graphs lie in R. We show that such a group always contains periodic maps of each order sufficient to generate R. A construction based on these periodic maps leads to totally nonperiodic R-automorphisms all of whose powers have disjoint graphs. The presence of a large number of periodic maps allows us to present a version of the Rohlin Lemma for R-automorphisms. Finally we show that this group always contains copies of free …
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 1, January 1993, College Of Engineering And Computer Science, Wright State University
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 1, January 1993, College Of Engineering And Computer Science, Wright State University
BITs and PCs Newsletter
A ten page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.
Uniqueness Of Radial Solutions Of Semilinear Elliptic Equations, Man Kam Kwong, Yi Li
Uniqueness Of Radial Solutions Of Semilinear Elliptic Equations, Man Kam Kwong, Yi Li
Yi Li
E. Yanagida recently proved that the classical Matukuma equation with a given exponent has only one finite mass solution. We show how similar ideas can be exploited to obtain uniqueness results for other classes of equations as well as Matukuma equations with more general coefficients.
Radial Symmetry Of Positive Solutions Of Nonlinear Elliptic Equations In Rn, Yi Li, Wei-Ming Ni
Radial Symmetry Of Positive Solutions Of Nonlinear Elliptic Equations In Rn, Yi Li, Wei-Ming Ni
Yi Li
No abstract provided.
On The Positive Solutions Of The Matukuma Equation, Yi Li
On The Positive Solutions Of The Matukuma Equation, Yi Li
On The Positive Solutions Of The Matukuma Equation, Yi Li
Mathematics and Statistics Faculty Publications
No abstract provided.
Radial Symmetry Of Positive Solutions Of Nonlinear Elliptic Equations In Rn, Yi Li, Wei-Ming Ni
Radial Symmetry Of Positive Solutions Of Nonlinear Elliptic Equations In Rn, Yi Li, Wei-Ming Ni
Mathematics and Statistics Faculty Publications
No abstract provided.
The Production And Escape Of Nitrogen Atoms On Mars, Jane L. Fox
The Production And Escape Of Nitrogen Atoms On Mars, Jane L. Fox
Physics Faculty Publications
We have computed the production rates and densities of odd nitrogen species in the Martian atmosphere using updated rate coefficients and a revised ionosphere-thermosphere model. We find that the computed densities of NO are somewhat smaller than those measured by Viking 1, but reasonable agreement can be obtained by assuming that the rate coefficient for loss of odd nitrogen in the reaction of N with NO is smaller at temperatures that prevail in the lower Martian thermosphere (about 130–160 K) than the standard value, which applies to temperatures of 200–400 K. We have also modeled the escape fluxes of N …
So Far (Schematically) Yet So Near (Semantically), Amit P. Sheth, Vipul Kashyap
So Far (Schematically) Yet So Near (Semantically), Amit P. Sheth, Vipul Kashyap
Kno.e.sis Publications
In a multidatabase system, schematic conflicts between two objects are usually of interest only when the objects have some semantic affinity. In this paper we try to reconcile the two perspectives. We first define the concept of semantic proximity and provide a semantic taxonomy. We then enumerate and classify the schematic and data conflicts. We discuss possible semantic similarities between two objects that have various types of schematic and data conflicts. Issues of uncertain information and inconsistent information are also addressed.
On Transactional Workflows, Amit P. Sheth, Marek Rusinkiewicz
On Transactional Workflows, Amit P. Sheth, Marek Rusinkiewicz
Kno.e.sis Publications
The basic transaction model has evolved over time to incorporate more complex transactions structures and to take the advantage of semantics of higher-level operations that cannot be seen at the level of page reads and writes. Well known examples of such extended transaction models include nested and multi-level transactions. A number of relaxed transaction models have been defined in the last several years that permit a controlled relaxation of the transaction isolation and atomicity to better match the requirements of various database applications. Correctness criteria other than global serializability have also been proposed. Several examples of extended/relaxed transaction models are …
Recovery Of Quenched Hopping Conduction In Gaas-Layers Grown By Molecular-Beam Epitaxy At 200-Degrees-C, David C. Look, Z-Q. Fang, J. R. Sizelove
Recovery Of Quenched Hopping Conduction In Gaas-Layers Grown By Molecular-Beam Epitaxy At 200-Degrees-C, David C. Look, Z-Q. Fang, J. R. Sizelove
Physics Faculty Publications
The dark current at 82 K, in GaAs layers grown by molecular-beam epitaxy at 200 °C and annealed at 550 °C, is reduced by a factor 350 after 5 min of IR (hν<~1.12 eV) light illumination. As temperature is swept upward at 0.2 K/s, the current recovers rapidly near 130 K. A numerical analysis of the current recovery, based on hopping conduction, gives an excellent fit to the data for a thermal recovery rate r=3×108 exp(-0.26/kT), very close to the rate observed for EL2 (AsGa). This proves that the conduction below 300 K in this material is due to hopping between AsGa-related centers in their ground states. Variable-range hopping [exp-(T0/T)1/4] gives a slightly better fit to the data than nearest-neighbor hopping [exp(-ɛ3/kT)] in the range T=82-160 K, but the fitted recovery …
New Asga Related Center In Gaas, David C. Look, Z-Q. Fang, J. R. Sizelove, C. E. Stutz
New Asga Related Center In Gaas, David C. Look, Z-Q. Fang, J. R. Sizelove, C. E. Stutz
Physics Faculty Publications
A new center related to AsGa has been found at relatively high concentrations (1017 cm-;3) in semi‐insulating (2×10;7 Ω cm) molecular beam epitaxial GaAs grown at 400 °C. Although the ir photoquenching and thermal recovery characteristics are nearly identical to those of ;EL2, the thermal activation energy is only 0.65±0.01 eV, much lower than the ;EL2 value of 0.75±0.01 eV. Other properties which are different include the electron‐capture barrier energy, hyperfine constant, and magnetic circular dichroism spectrum.
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 8, Number 8, November 1992, College Of Engineering And Computer Science, Wright State University
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 8, Number 8, November 1992, College Of Engineering And Computer Science, Wright State University
BITs and PCs Newsletter
A fourteen page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.
Student Fact Book, Fall 1992, Wright State University, Office Of Student Information Systems, Wright State University
Student Fact Book, Fall 1992, Wright State University, Office Of Student Information Systems, Wright State University
Wright State University Student Fact Books
The student fact book has general demographic information on all students enrolled at Wright State University for Fall Quarter, 1992.
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 8, Number 7, October 1992, College Of Engineering And Computer Science, Wright State University
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 8, Number 7, October 1992, College Of Engineering And Computer Science, Wright State University
BITs and PCs Newsletter
A ten page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.
Abduction In Annotated Logic Programming, Krishnaprasad Thirunarayan
Abduction In Annotated Logic Programming, Krishnaprasad Thirunarayan
Kno.e.sis Publications
The author investigates techniques to make the logic programming paradigm more expressive for knowledge representation, while simultaneously retaining the computational advantages of efficiency and simplicity. He extends the annotated language of K. Thirunarayan and K. Kifer (1989) in various directions to obtain an enriched representation language. In particular, rule bodies are permitted to be a conjunction of literals, and the rules to be recursive. A class of annotated logic programs called the stratified programs is identified which can be given a unique supported minimal Herbrand model as their meaning. Abductive reasoning is integrated into this annotated logic framework. The notion …
Shifted X-Ray Photoelectron Peak In Molecular-Beam Epitaxial Gaas Grown At 200 Degrees C, David C. Look, J. T. Grant, J. R. Sizelove
Shifted X-Ray Photoelectron Peak In Molecular-Beam Epitaxial Gaas Grown At 200 Degrees C, David C. Look, J. T. Grant, J. R. Sizelove
Physics Faculty Publications
X‐ray photoelectron spectroscopic results show that molecular beam epitaxial GaAs grown at 200 °C has a reduced effective surface potential energy, about 0.5 eV, compared with the usual 0.7 eV. A Poisson analysis of the data, using parameters from Hall effect and absorption measurements, requires that the Fermi‐level‐controlling defect in this material must have a significantly lower activation energy than that of EL2, an unexpected result.
Photoquenching Of Hopping Conduction In Low-Temperature-Grown Molecular-Beam-Epitaxial Gaas, Z-Q. Fang, David C. Look
Photoquenching Of Hopping Conduction In Low-Temperature-Grown Molecular-Beam-Epitaxial Gaas, Z-Q. Fang, David C. Look
Physics Faculty Publications
We have observed IR photoquenching of the hopping conduction in GaAs samples grown by molecular beam epitaxy at the low temperature of 250 °C and annealed at temperatures from 300 to 600 °C. A key element in the success of this study is removal of the layers from their substrates. The hopping conduction recovers at about 140 K, with a thermal activation energy of about 0.3 eV.
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 8, Number 6, September 1992, College Of Engineering And Computer Science, Wright State University
Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 8, Number 6, September 1992, College Of Engineering And Computer Science, Wright State University
BITs and PCs Newsletter
An eight page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.
Using Flexible Transactions To Support Multisystem Telecommunication Applications, Mansoor Ansari, Linda Ness, Marek Rusinkiewicz, Amit P. Sheth
Using Flexible Transactions To Support Multisystem Telecommunication Applications, Mansoor Ansari, Linda Ness, Marek Rusinkiewicz, Amit P. Sheth
Kno.e.sis Publications
Service order provisioning is an important telecommunication application that automates the process of providing telephone services in response to the customer requests. It is an example of a multi-system application that requires access to multiple, independently developed application systems and their databases. In this paper, we describe the design and implementation of a prototype system1 that supports the execution of the Flexible Transactions and its use to develop the service order provisioning application. We argue that such approach may be used to support the development of multi-system, flow-through processing applications in a systematic and organized manner. Its advantages include fast …
Traps In Semi-Insulating Inp Studied By Thermally Stimulated Current Spectroscopy, Z. Q. Fang, David C. Look, J. H. Zhao
Traps In Semi-Insulating Inp Studied By Thermally Stimulated Current Spectroscopy, Z. Q. Fang, David C. Look, J. H. Zhao
Physics Faculty Publications
Traps in Fe‐doped semi‐insulating InP samples have been studied by thermally stimulated current spectroscopy with IR (hν≤1.12 eV) excitation at 81 K. The possible involvement of native defects in determining the compensation mechanisms is suggested based on the observation of other than the usual 0.64 eV Fe‐related activation energy for the dark current in one of the four samples supplied from different sources. A metastable behavior of traps in another sample was found and explained by a charge‐controlled defect reaction model. Three out of the six traps observed are suggested to be electron traps and one among the …
Defect Models In Electron-Irradiated N-Type Gaas, B. Ziebro, Joseph W. Hemsky, David C. Look
Defect Models In Electron-Irradiated N-Type Gaas, B. Ziebro, Joseph W. Hemsky, David C. Look
Physics Faculty Publications
1 MeV electron irradiation has been performed in degenerate, n‐type (n≂2×1017 cm-3), molecular beam epitaxial GaAs layers, and Hall effect measurements have been carried out during the irradiation in order to get accurate defect production data. The results have been fitted with statistical models, and are most consistent with the usual E1 (EC-0.045 eV) and E2 (EC-0.15 eV) levels being the (-/0) and (0/+) transitions of the As vacancy, respectively. Also, an acceptor well below EC-0.15 eV is produced at a much higher rate than that of E1 and E2.
Mechanisms For Gaas Surface Passivation By A Molecular-Beam Epitaxial Cap Layer Grown At 200-Degrees-C, David C. Look, D. C. Walters, C. E. Stutz, K. R. Evans, J. R. Sizelove
Mechanisms For Gaas Surface Passivation By A Molecular-Beam Epitaxial Cap Layer Grown At 200-Degrees-C, David C. Look, D. C. Walters, C. E. Stutz, K. R. Evans, J. R. Sizelove
Physics Faculty Publications
A thin, undoped, molecular beam epitaxial (MBE) GaAs cap layer grown on top of an n‐type conductive layer significantly reduces the free‐electron depletion from the latter. By analyzing electron transfer to surface, interface, and bulk acceptor states in the cap, as a function of cap thickness, we show that either (1) the usual EC−0.7 eV surface states are absent, (2) a dense donor near EC−0.4 eV exists or (3) a high donor interface charge (∼5×1012 cm−2) is present. Any of these conclusions constitutes an important new aspect of low‐temperature MBE GaAs.