Open Access. Powered by Scholars. Published by Universities.®

Physical Sciences and Mathematics Commons™

Open Access. Powered by Scholars. Published by Universities.®

Physics Faculty Publications

Discipline
Institution
Keyword
Publication Year

Articles 1531 - 1560 of 1942

Full-Text Articles in Physical Sciences and Mathematics

Characterization Of Near-Surface Traps In Semiconductors: Gan, David C. Look, Z-Q. Fang Jul 2001

Characterization Of Near-Surface Traps In Semiconductors: Gan, David C. Look, Z-Q. Fang

Physics Faculty Publications

We present a simple a criterion, based on deep-level transient spectroscopy peak heights S(Vr) at two or more values of reverse bias Vr, to unequivocally determine whether or not a particular semiconductor trap is of bulk or near-surface nature. Moreover, we present an expression for S(Vr) with fitting parameters ϕB, the Schottky barrier height; δ, the trap penetration depth; and NT, the trap density. Application of the method to a thick, high-quality, epitaxial GaN layer, reveals two common traps which penetrate only 2700±300 Å into the …

Go to article

Microcathodoluminescence Of Impurity Doping At Gallium Nitride/Sapphire Interfaces, S. H. Goss, X. L. Sun, A. P. Young, L. J. Brillson, David C. Look, Richard J. Molnar Jun 2001

Microcathodoluminescence Of Impurity Doping At Gallium Nitride/Sapphire Interfaces, S. H. Goss, X. L. Sun, A. P. Young, L. J. Brillson, David C. Look, Richard J. Molnar

Physics Faculty Publications

We have used low-temperature cathodoluminescence spectroscopy (CLS) to probe the spatial distribution and energies of electronic defects near GaN/Al2O3 interfaces grown by hydride vapor phase epitaxy (HVPE). Cross sectional secondary electron microscopy CLS shows systematic variations in impurity/defect emissions over a wide range of HVPE GaN/Sapphire electronic properties. These data, along with electrochemical capacitance–voltage profiling and secondary ion mass spectrometry, provide a consistent picture of near-interface doping by O diffusion from Al2O3 into GaN, over a range 100–1000 nm.

Go to article

Fine Structure On The Green Band In Zno, D. C. Reynolds, David C. Look, B. Jogai Jun 2001

Fine Structure On The Green Band In Zno, D. C. Reynolds, David C. Look, B. Jogai

Physics Faculty Publications

An emission band at 2.4 eV, called the green band, is observed in most ZnO samples, no matter what growth technique is used. Sometimes this band includes fine structure, which consists mainly of doublets, repeated with a longitudinal-optical-phonon-energy spacing (72 meV). We have developed a vibronic model for the green band, based on transitions from two separate shallow donors to a deep acceptor. The donors, at energies 30 and 60 meV from the conduction-band edge, respectively, are also found from Hall-effect measurements.

Go to article

Evidence For Shallow Acceptors In Gan, D. C. Reynolds, David C. Look, B. Jogai, Richard J. Molnar Jun 2001

Evidence For Shallow Acceptors In Gan, D. C. Reynolds, David C. Look, B. Jogai, Richard J. Molnar

Physics Faculty Publications

Two low-temperature photoluminescence lines in GaN, in the region of energies commonly interpreted as longitudinal optical-phonon replicas of free excitons, donor-bound excitons, or acceptor-bound excitons, are reinterpreted as acceptor-bound excitons (A0X’s) collapsing to n=2 and n=3 excited states, respectively, of the acceptors involved. Application of this model to two sets of A0X-related lines in hydride-vapor-phase-grown GaN gives acceptor energies of 85±1, and 115±1 meV, respectively. The existence of such shallow acceptor states, if confirmed, is of great technological importance.

Go to article

Phonon-Pumped Terahertz Gain In N-Type Gaas/Algaas Superlattices, Greg Sun, Richard A. Soref May 2001

Phonon-Pumped Terahertz Gain In N-Type Gaas/Algaas Superlattices, Greg Sun, Richard A. Soref

Physics Faculty Publications

Local population inversion and far-IR gain are proposed and theoretically analyzed for an unbiased n-doped GaAs/Al0.15Ga0.85As superlattice pumped solely by phonons. The lasing transition occurs at the Brillouin zone boundary of the superlattice wave vector kzbetween the two conduction minibands CB1 and CB2 of the opposite curvature in kzspace. The proposed waveguided structure is contacted above and below by heat sinks at 300 K and 77 K, respectively. Atop the superlattice, a heat buffer layer confines longitudinal optical phonons for enhanced optical-phonon pumping of CB1 electrons. A gain of 345 cm …

Go to article

Supernumerary Spacing Of Rainbows Produced By An Elliptical-Cross-Section Cylinder. Ii. Experiment, Charles L. Adler, David Phipps, Kirk W. Saunders, Justin K. Nash, James A. Lock May 2001

Supernumerary Spacing Of Rainbows Produced By An Elliptical-Cross-Section Cylinder. Ii. Experiment, Charles L. Adler, David Phipps, Kirk W. Saunders, Justin K. Nash, James A. Lock

Physics Faculty Publications

We measured the supernumerary spacing parameter of the first- and second-order rainbows of two glass rods, each having an approximately elliptical cross section, as a function of the rod's rotation angle. We attribute large fluctuations in the supernumerary spacing parameter to small local inhomogeneities in the rod's refractive index. The low-pass filtered first-order rainbow experimental data agree with the prediction of ray-tracing-wave-front modeling to within a few percent, and the second-order rainbow data exhibit additional effects that are due to rod nonellipticity. (C) 2001 Optical Society of America.

Go to article

Deep Centers In A Free-Standing Gan Layer, Z-Q. Fang, David C. Look, P. Visconti, D. F. Wang, C. Z. Lu, F. Yun, H. Morkoç, Seong-Ju S. Park, K. Y. Lee Apr 2001

Deep Centers In A Free-Standing Gan Layer, Z-Q. Fang, David C. Look, P. Visconti, D. F. Wang, C. Z. Lu, F. Yun, H. Morkoç, Seong-Ju S. Park, K. Y. Lee

Physics Faculty Publications

Schottky barrier diodes, on both Ga and N faces of a ∼300-μm-thick free-standing GaN layer, grown by hydride vapor phase epitaxy (HVPE) on Al2O3 followed by laser separation, were studied by capacitance–voltage and deep level transient spectroscopy (DLTS) measurements. From a 1/C2 vs V analysis, the barrier heights of Ni/Au Schottky contacts were determined to be different for the two polar faces: 1.27 eV for the Ga face, and 0.75 eV for the N face. In addition to the four common DLTS traps observed previously in other epitaxial GaN including HVPE-grown GaN a new trap …

Go to article

Experimental Observation Of Rainbow Scattering By A Coated Cylinder: Twin Primary Rainbows And Thin-Film Interference, Charles L. Adler, James A. Lock, Justin K. Nash, Kirk W. Saunders Mar 2001

Experimental Observation Of Rainbow Scattering By A Coated Cylinder: Twin Primary Rainbows And Thin-Film Interference, Charles L. Adler, James A. Lock, Justin K. Nash, Kirk W. Saunders

Physics Faculty Publications

We experimentally examine the primary rainbow created by the illumination of a coated cylinder. We present a simple technique for varying the coating thickness over a wide range of values, and we see evidence for two different scattering regimes. In one, where the coating thickness is large, twin rainbows are produced. In the second, where the coating is thin enough to act as a thin film, a single rainbow is produced whose intensity varies periodically as the coating thickness varies. We find good agreement with previous theoretical predictions. (C) 2001 Optical Society of America.

Go to article

High Mobility In N-Type Gan Substrates, A. Saxler, David C. Look, S. Elhamri, J. R. Sizelove, William C. Mitchel, C. M. Sung, S. S. Park, K. Y. Lee Mar 2001

High Mobility In N-Type Gan Substrates, A. Saxler, David C. Look, S. Elhamri, J. R. Sizelove, William C. Mitchel, C. M. Sung, S. S. Park, K. Y. Lee

Physics Faculty Publications

No abstract provided.

Go to article

Nonvolatile Grating In An Azobenzene Polymer With Optimized Molecular Reorientation, Pengfei Wu, D.V.G.L.N. Rao, B. R. Kimball, M. Nakashima, B. S. Decristofano Feb 2001

Nonvolatile Grating In An Azobenzene Polymer With Optimized Molecular Reorientation, Pengfei Wu, D.V.G.L.N. Rao, B. R. Kimball, M. Nakashima, B. S. Decristofano

Physics Faculty Publications

We demonstrated a nonvolatile grating using an azobenzene polymer film with polarized two color beams. The reorientation of azobenzene molecules can be optimized when the two color light beams are polarized perpendicularly. The stored information can be read repeatedly without volatility with the same wavelength as the writing beam.

Go to article

Sige/Si Thz Laser Based On Transitions Between Inverted Mass Light-Hole And Heavy-Hole Subbands, L. Friedman, Greg Sun, Richard A. Soref Jan 2001

Sige/Si Thz Laser Based On Transitions Between Inverted Mass Light-Hole And Heavy-Hole Subbands, L. Friedman, Greg Sun, Richard A. Soref

Physics Faculty Publications

We have investigated a SiGe/Si quantum-well laser based on transitions between the light-hole and heavy-hole subbands. The lasing occurs in the region of k space where the dispersion of ground-state light-hole subband is so nonparabolic that its effective mass is inverted. This kind of lasing mechanism makes total population inversion between the two subbands unnecessary. The laser structure can be electrically pumped through tunneling in a quantum cascade scheme. Optical gain as high as 172/cm at the wavelength of 50 μm can be achieved at the temperature of liquid nitrogen, even when the population of the upper laser subband is …

Go to article

Multilayer Mim Inversion Of Aem Data: Theory And Field Example, Clyde J. Bergeron Jr, Juliette W. Ioup, Yan Wu, George E. Ioup, Kenneth W. Holladay Jan 2001

Multilayer Mim Inversion Of Aem Data: Theory And Field Example, Clyde J. Bergeron Jr, Juliette W. Ioup, Yan Wu, George E. Ioup, Kenneth W. Holladay

Physics Faculty Publications

This paper presents a multilayer generalization of an algebraic method of inverting frequency-doma in airborne active electromagnetic (AEM) data in terms of 1-D layered earth models. The processing of the AEM data, which includes a recalibration procedure, is also outlined. The inversion is applied to synthetic fields generated from a multilayer model which is intended to approximate a measured conductivity profile of the water column in the Gulf of Mexico and to measured AEM data from a survey of the Barataria Bay estuary region of the Louisiana Gulf of Mexico coast. The inversion results from the synthetic data are in …

Go to article

Coherent-Path Model For Nuclear Resonant Scattering Of Gamma Radiation From Nuclei Excited By Synchrotron Radiation, Gilbert R. Hoy, Jos Odeurs, Romain Coussement Jan 2001

Coherent-Path Model For Nuclear Resonant Scattering Of Gamma Radiation From Nuclei Excited By Synchrotron Radiation, Gilbert R. Hoy, Jos Odeurs, Romain Coussement

Physics Faculty Publications

Previous theoretical descriptions of nuclear resonant scattering of synchrotron radiation have been based on the semiclassical optical model or on several quantum mechanical models. These models are fine but do not give a clear physical picture of all the processes. The theory presented here gives a clear physical picture of all the relevant aspects of nuclear resonant scattering. The model treats the nuclear resonant sample as a one-dimensional chain of "effective" nuclei. However, the model is deceptive. It only appears to be one dimensional. It actually treats the sample as a series of "effective" planes. The analysis uses the time-dependent …

Go to article

Gamma Echo Interpreted As A Phase-Shift Induced Transparency, Gilbert R. Hoy, Jos Odeurs Jan 2001

Gamma Echo Interpreted As A Phase-Shift Induced Transparency, Gilbert R. Hoy, Jos Odeurs

Physics Faculty Publications

In the gamma-echo technique a radioactive source is moved, with respect to a nuclear-resonant absorber, during the lifetime of first-excited nuclear state. This introduces a phase shift between the source radiation and the radiation from the absorber. If the source is moved abruptly, introducing a pi phase shift, the time-dependent intensity shows a sharp increase in the intensity at that time, the "gamma echo." Using the recently developed one-dimensional quantum-mechanical model, based on the technique developed by Heitler and Harris, the gamma-echo effect is seen to be a phase-shift-induced transparency. A closed-form solution for the time-dependent transmitted intensity has been …

Go to article

Evolution Of Deep Centers In Gan Grown By Hydride Vapor Phase Epitaxy, Z-Q. Fang, David C. Look, J. Jasinski, M. Benamara, Z. Liliental-Weber, Richard J. Molnar Jan 2001

Evolution Of Deep Centers In Gan Grown By Hydride Vapor Phase Epitaxy, Z-Q. Fang, David C. Look, J. Jasinski, M. Benamara, Z. Liliental-Weber, Richard J. Molnar

Physics Faculty Publications

Deep centers and dislocation densities in undoped n GaN, grown by hydride vapor phase epitaxy (HVPE), were characterized as a function of the layer thickness by deep level transient spectroscopy and transmission electron microscopy, respectively. As the layer thickness decreases, the variety and concentration of deep centers increase, in conjunction with the increase of dislocation density. Based on comparison with electron-irradiation induced centers, some dominant centers in HVPE GaN are identified as possible point defects.

Go to article

Order-Disorder Phase Transitions In Kno2 , Csno2, And Tlno2 Crystals: A Molecular Dynamics Study, Chun-Gang Duan, Wai-Ning Mei, Robert W. Smith, Jianjun Liu, M. M. Ossowski, John R. Hardy Jan 2001

Order-Disorder Phase Transitions In Kno2 , Csno2, And Tlno2 Crystals: A Molecular Dynamics Study, Chun-Gang Duan, Wai-Ning Mei, Robert W. Smith, Jianjun Liu, M. M. Ossowski, John R. Hardy

Physics Faculty Publications

The order-disorder phase transitions of KNO2 , CsNO2, and TlNO2 have been studied using parameter-free molecular dynamics simulation. It is found that the phase transitions in nitrites investigated are driven by the rotations of the NO2 2 ions about different axes together with displacements of cations and anions. We successfully reproduce the high-temperature phases of these nitrites, i.e., the NaCl-like structure for KNO2 and CsCl-like structure for Cs(Tl)NO2. Based on the investigation of the radial distribution function of the cations and anions, we explain why KNO2 and Cs(Tl)NO2 form quite different low-temperature phases.

Go to article

Electroproduction Of The Λ(1520) Hyperon, M. Bektasoglu, G. E. Dodge, T. A. Forest, C. E. Hyde-Wright, S. E. Kuhn, R. A. Niyazov, L. B. Weinstein, Et Al., The Clas Collaboration Jan 2001

Electroproduction Of The Λ(1520) Hyperon, M. Bektasoglu, G. E. Dodge, T. A. Forest, C. E. Hyde-Wright, S. E. Kuhn, R. A. Niyazov, L. B. Weinstein, Et Al., The Clas Collaboration

Physics Faculty Publications

The reaction e→pe′K+Λ(1520) with Λ(1520)→p′K− was studied at electron beam energies of 4.05, 4.25, and 4.46 GeV, using the CLAS detector at the Thomas Jefferson National Accelerator Facility. The cos θK+, φK+, Q2, and W dependencies of Λ(1520) electroproduction are presented for the kinematic region 0.9 < Q2 < 2.4 GeV2 and 1.95 < W < 2.65 GeV. Also, the Q2 dependence of the Λ(1520) decay angular distribution is presented for the first time. The cosθK+ angular distributions suggest t-channel diagrams dominate the production process. Fits to the Λ(1520) t-channel helicity frame decay angular distributions indicate the m …

Go to article

The Ep → E'P Η Reaction At And Above The S₁₁ (1535) Baryon Resonance, R. Thompson, G. E. Dodge, C. E. Hyde-Wright, A. Klein, S. E. Kuhn, R. A. Niyazov, L. M. Qin, L. B. Weinstein, Et Al., The Clas Collaboration Jan 2001

The Ep → E'P Η Reaction At And Above The S₁₁ (1535) Baryon Resonance, R. Thompson, G. E. Dodge, C. E. Hyde-Wright, A. Klein, S. E. Kuhn, R. A. Niyazov, L. M. Qin, L. B. Weinstein, Et Al., The Clas Collaboration

Physics Faculty Publications

New cross sections for the reaction ep → ep η are reported for total center of mass energy W = 1.5-1.86 GeV and invariant momentum transfer Q2 = 0.25-1.5 (GeV/c)2. This large kinematic range allows extraction of important new information about response functions, photocouplings, and etaN coupling strengths of baryon resonances. Newly observed structure at W ~ 1.65 GeV is shown to come from interference between S and P waves and can be interpreted with known resonances. Improved values are derived for the photon coupling amplitude for the S11(1535) resonance.

Go to article

Exclusive Electroproduction Of ᵠ Mesons At 4.2 Gev, M. Bektasoglu, L. Ciciani, G. E. Dodge, T. A. Forest, C. E. Hyde-Wright, S. E. Kuhn, L. M. Qin, F. Sabatié, L. B. Weinstein, Et Al., The Clas Collaboration Jan 2001

Exclusive Electroproduction Of ᵠ Mesons At 4.2 Gev, M. Bektasoglu, L. Ciciani, G. E. Dodge, T. A. Forest, C. E. Hyde-Wright, S. E. Kuhn, L. M. Qin, F. Sabatié, L. B. Weinstein, Et Al., The Clas Collaboration

Physics Faculty Publications

We studied the exclusive reaction ep → e' p' ᵠ using the ᵠ →K+K- decay mode. The data were collected using a 4.2 GeV incident electron beam and the CEBAF Large Acceptance Spectrometer (CLAS) at the Thomas Jefferson National Accelerator Facility. Our experiment covers the range in Q2 from 0.7 to 2.2 GeV2and W from 2.0 to 2.6 GeV. Taken together with all previous data, we find a consistent picture of ᵠ production on the proton. Our measurement shows the expected decrease of the t slope with the vector-meson formation time c Δ t …

Go to article

Corrected Article: Exclusive Electroproduction Of ᵠ Mesons At 4.2 Gev [Physical. Rev. C 63, 065205, (2001)], M. Bektasoglu, L. Ciciani, G. E. Dodge, T. A. Forest, C. E. Hyde-Wright, S. E. Kuhn, L. M. Qin, F. Sabatié, L. B. Weinstein, Et Al., The Clas Collaboration Jan 2001

Corrected Article: Exclusive Electroproduction Of ᵠ Mesons At 4.2 Gev [Physical. Rev. C 63, 065205, (2001)], M. Bektasoglu, L. Ciciani, G. E. Dodge, T. A. Forest, C. E. Hyde-Wright, S. E. Kuhn, L. M. Qin, F. Sabatié, L. B. Weinstein, Et Al., The Clas Collaboration

Physics Faculty Publications

We studied the exclusive reaction ep → e' p' ᵠ using the ᵠ →K+K- decay mode. The data were collected using a 4.2 GeV incident electron beam and the CEBAF Large Acceptance Spectrometer (CLAS) at the Thomas Jefferson National Accelerator Facility. Our experiment covers the range in Q2 from 0.7 to 2.2 GeV2and W from 2.0 to 2.6 GeV. Taken together with all previous data, we find a consistent picture of ᵠ production on the proton. Our measurement shows the expected decrease of the t slope with the vector-meson formation time c Δ t …

Go to article

Effective Field Theory For The Small-X Evolution, I. Balitsky Jan 2001

Effective Field Theory For The Small-X Evolution, I. Balitsky

Physics Faculty Publications

The small-x behavior of structure functions in the saturation region is determined by the non-linear generalization of the BFKL equation. I suggest the effective field theory for the small-x evolution which solves formally this equation. The result is the 2+1 functional integral for the structure functions at small x.

Go to article

Ga-Doped Zno Films Grown On Gan Templates By Plasma-Assisted Molecular-Beam Epitaxy, H. J. Ko, Yanfang Chen, S. K. Hong, H. Wenisch, T. Yao, David C. Look Dec 2000

Ga-Doped Zno Films Grown On Gan Templates By Plasma-Assisted Molecular-Beam Epitaxy, H. J. Ko, Yanfang Chen, S. K. Hong, H. Wenisch, T. Yao, David C. Look

Physics Faculty Publications

We have investigated the structural and optical properties of Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy. The carrier concentration in Ga-doped ZnO films can be controlled from 1.33×1018/cm3 to 1.13×1020/cm3. Despite high Ga incorporation, the linewidth of (0002) ω-rocking curves of Ga-doped ZnO films still lies in the range from 5 to 15 arc min. Photoluminescence (PL) spectra of Ga-doped ZnO films show dominant near-bandedge emission with negligibly weak deep-level emission, independent of carrier concentration. The PL spectrum exhibits a new emission line at 3.358 eV, which corresponds to …

Go to article

Combined Effects Of Screening And Band Gap Renormalization On The Energy Of Optical Transitions In Zno And Gan, D. C. Reynolds, David C. Look, B. Jogai Nov 2000

Combined Effects Of Screening And Band Gap Renormalization On The Energy Of Optical Transitions In Zno And Gan, D. C. Reynolds, David C. Look, B. Jogai

Physics Faculty Publications

The energy positions of the optical transitions in both GaN and ZnO were investigated when the samples were excited simultaneously with a HeCd laser and an Ar+ ion laser. The increased number of free electrons excited by the Ar+ ion laser will effectively screen both the free exciton and bound exciton transitions, resulting in a blueshift. The increased number of free electrons also produces many-body effects, which lead to a reduction of the band gap energy and thus a redshift. The resultant of screening and renormalization results in a redshift of the optical transitions in ZnO but a …

Go to article

Paramagnetic Meissner Effect In Nb Disks, Petru S. Fodor, Lowell E. Wenger Nov 2000

Paramagnetic Meissner Effect In Nb Disks, Petru S. Fodor, Lowell E. Wenger

Physics Faculty Publications

Further details of the zero-field-cooled-magnetization and field-cooled-magnetization results on Nb disks exhibiting the paramagnetic Meissner effect (PME) are described. These studies indicate that two well-defined temperatures can be associated with features in the magnetization results. The higher characteristic temperature Tu is correlated with appearance of the paramagnetic moment and is strongly dependent upon the process used in forming the disk-shaped geometry of these Nb samples. The lower temperature Tp is associated with the “intrinsic coupling” of the interior Nb platelets. These latest results are shown to be consistent with the flux compression model for the appearance of the PME.

Go to article

Electron Beam And Optical Depth Profiling Of Quasibulk Gan, L. Chernyak, A. Osinsky, G. Nootz, A. Schulte, J. Jasinski, M. Benamara, Z. Liliental-Weber, David C. Look, Richard J. Molnar Oct 2000

Electron Beam And Optical Depth Profiling Of Quasibulk Gan, L. Chernyak, A. Osinsky, G. Nootz, A. Schulte, J. Jasinski, M. Benamara, Z. Liliental-Weber, David C. Look, Richard J. Molnar

Physics Faculty Publications

Electron beam and optical depth profiling of thick (5.5–64 μm) quasibulk n-type GaN samples, grown by hydride vapor-phase epitaxy, were carried out using electron beam induced current (EBIC), microphotoluminescence (PL), and transmission electron microscopy (TEM). The minority carrier diffusion length, L, was found to increase linearly from 0.25 μm, at a distance of about 5 μm from the GaN/sapphire interface, to 0.63 μm at the GaN surface, for a 36-μm-thick sample. The increase in L was accompanied by a corresponding increase in PL band-to-band radiative transition intensity as a function of distance from the GaN/sapphire interface. We attribute …

Go to article

Identification Of The Gamma(5) And Gamma(6) Free Excitons In Gan, D. C. Reynolds, David C. Look, B. Jogai, A. W. Saxler, Seong-Ju S. Park, J. Y. Hahn Oct 2000

Identification Of The Gamma(5) And Gamma(6) Free Excitons In Gan, D. C. Reynolds, David C. Look, B. Jogai, A. W. Saxler, Seong-Ju S. Park, J. Y. Hahn

Physics Faculty Publications

The Γ5 and Γ6 free excitons have been identified in GaN from emission measurements. Another emission peak is also observed which we believe to be the longitudinal free exciton. These measurements along with electrical measurements, which show the sample to have very high peak mobility, attest to the high quality of the sample.

Go to article

Exterior Caustics Produced In Scattering Of A Diagonally Incident Plane Wave By A Circular Cylinder: Semiclassical Scattering Theory Analysis, James A. Lock, Charles L. Adler, Edward A. Hovenac Oct 2000

Exterior Caustics Produced In Scattering Of A Diagonally Incident Plane Wave By A Circular Cylinder: Semiclassical Scattering Theory Analysis, James A. Lock, Charles L. Adler, Edward A. Hovenac

Physics Faculty Publications

Rie use the semiclassical limit of electromagnetic wave scattering theory to determine the properties of the exterior caustics of a diagonally incident plane wave scattered by an infinitely long homogeneous dielectric circular cylinder in both the near zone and the far zone. The transmission caustic has an exterior/interior cusp transition as the tilt angle of the incident beam is increased, and each of the rainbow caustics has a far-zone rainbow/exterior cusp transition and an exterior/interior cusp transition as the incident beam tilt angle is increased. We experimentally observe and analyze both transitions of the first-order rainbow. We also compare the …

Go to article

Supernumerary Spacing Of Rainbows Produced By An Elliptical-Cross-Section Cylinder. I. Theory, James A. Lock Sep 2000

Supernumerary Spacing Of Rainbows Produced By An Elliptical-Cross-Section Cylinder. I. Theory, James A. Lock

Physics Faculty Publications

A sequence of rainbows is produced in light scattering by a particle of high symmetry in the short-wavelength Limit, and a supernumerary interference pattern occurs to one side of each rainbow. Using both a ray-tracing procedure and the Debye-series decomposition of first-order perturbation wave theory, I examine the spacing of the supernumerary maxima and minima as a function of the cylinder rotation angle when an elliptical-cross-section cylinder is normally illuminated by a plane wave. I find that the supernumerary spacing depends sensitively on the cylinder-cross-section shape, and the spacing varies sinusoidally as a function of the cylinder rotation angle for …

Go to article

Photoluminescence Measurements From The Two Polar Faces Of Zno, R. E. Sherriff, D. C. Reynolds, David C. Look, B. Jogai, J. E. Hoelscher, T. C. Collins, G. Cantwell, W. C. Harsch Sep 2000

Photoluminescence Measurements From The Two Polar Faces Of Zno, R. E. Sherriff, D. C. Reynolds, David C. Look, B. Jogai, J. E. Hoelscher, T. C. Collins, G. Cantwell, W. C. Harsch

Physics Faculty Publications

The crystal structure of ZnO is wurtzite and the stacking sequence of atomic layers along the “c” axis is not symmetric. As a result, a ZnO crystal surface that is normal to the c axis exposes one of two distinct polar faces, with (0001̄) being considered the O face and (0001) the Zn face. Photoluminescence (PL) measurements on the two faces reveal a striking difference. Two transitions are observed in PL that are dominant from the O face and barely observed in PL from the Zn face. These lines are identified as phonon replicas of a particular D …

Go to article

Two-Level Atom In An Optical Parametric Oscillator: Spectra Of Transmitted And Fluorescent Fields In The Weak Driving Field Limit, James P. Clemens, Perry R. Rice, Pranaw Kumar Rungta, Robert J. Brecha Aug 2000

Two-Level Atom In An Optical Parametric Oscillator: Spectra Of Transmitted And Fluorescent Fields In The Weak Driving Field Limit, James P. Clemens, Perry R. Rice, Pranaw Kumar Rungta, Robert J. Brecha

Physics Faculty Publications

We consider the interaction of a two-level atom inside an optical parametric oscillator. In the weak-driving-field limit, we essentially have an atom-cavity system driven by the occasional pair of correlated photons, or weakly squeezed light. We find that we may have holes, or dips, in the spectrum of the fluorescent and transmitted light. This occurs even in the strong-coupling limit when we find holes in the vacuum-Rabi doublet. Also, spectra with a subnatural linewidth may occur. These effects disappear for larger driving fields, unlike the spectral narrowing obtained in resonance fluorescence in a squeezed vacuum; here it is important that …

Go to article

First Prev Next Last