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1999

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Articles 2281 - 2310 of 2555

Full-Text Articles in Physical Sciences and Mathematics

Implications Of \Delta\Rho And Charm Ii Data For Z' Physics, Durmuş Ali̇ Demi̇r Jan 1999

Implications Of \Delta\Rho And Charm Ii Data For Z' Physics, Durmuş Ali̇ Demi̇r

Turkish Journal of Physics

We discuss the constraints on the Z^{\prime} model parameters coming from Z-pole and low-energy \nu_{\mu}-e scattering data in the frame work of GUT-motivated models. We find that when the coupling constant of the extra U(1) is small (large) the parameter space is mainly determined by the Z-pole (the low-energy \nu_{\mu}-e scattering) data.

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A New Formalism For Nonextensive Physical Systems: Tsallis Thermostatistics, Uğur Tirnakli, Fevzi Büyükkiliç, Doğan Demi̇rhan Jan 1999

A New Formalism For Nonextensive Physical Systems: Tsallis Thermostatistics, Uğur Tirnakli, Fevzi Büyükkiliç, Doğan Demi̇rhan

Turkish Journal of Physics

Although Boltzmann-Gibbs (BG) statistics provides a suitable tool which enables us to handle a large number of physical systems satisfactorily, it has some basic restrictions : (i) the range of the microscopic interactions must be small compared to the linear size of the macroscopic systems (short-range interactions) , (ii) the time range of the microscopic memory must be small compared to the observation time (Marcovian processes) and (iii) the system must evolve in an Euclidean-like space-time. In the case of a breakdown in one and/or the others of these restrictions, BG statistics fails. More precisely, the situation could be classified …

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Neural Classifiers For Learning Higher-Order Correlations, Marifi Güler Jan 1999

Neural Classifiers For Learning Higher-Order Correlations, Marifi Güler

Turkish Journal of Physics

Studies by various authors suggest that higher-order networks can be more powerful and are biologically more plausible with respect to the more traditional multilayer networks. These architectures make explicit use of nonlinear interactions between input variables in the form of higher-order units or product units. If it is known a priori that the problem to be implemented possesses a given set of invariances like in the translation, rotation, and scale invariant pattern recognition problems, those invariances can be encoded, thus eliminating all higher-order terms which are incompatible with the invariances. In general, however, it is a serious set-back that the …

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Ordering Due To Disorder In Frustrated Quantum Magnetic Systems, Taner Yildirim Jan 1999

Ordering Due To Disorder In Frustrated Quantum Magnetic Systems, Taner Yildirim

Turkish Journal of Physics

The phenomenon of order by disorder in frustrated magnetic systems is reviewed. Disorder (thermal or quantum fluctuations) may sometimes give rise to long range ordering in systems with frustration, where one must often consider the selection among classically degenerate ground states which are not equivalent by any symmetry. The lowest order effects of quantum fluctuations in such frustrated systems usually resolves the continues degeneracy of the ground state manifold into discrete Ising--type degeneracy. A unique ground state selection out of this Ising degenerate manifold then occurs due to higher order effects of quantum fluctuations. For systems such as face-centered cubic …

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The Renormalization-Group Microscope: The Local Statistical Mechanics Of Heterogeneous Systems, Dicle Yeşi̇lleten, A. Nihat Berker Jan 1999

The Renormalization-Group Microscope: The Local Statistical Mechanics Of Heterogeneous Systems, Dicle Yeşi̇lleten, A. Nihat Berker

Turkish Journal of Physics

Renormalization-group theory is developed to yield all local microscopic thermodynamic densities in heterogeneous systems. Local energy densities and local magnetizations are thus obtained for random-bond systems, random-field systems, and spin-glasses, in two and three dimensions. Different order-disorder mechanisms in these diverse systems, such as chaotic ordering and domain-wall melting, become quantitatively evident.

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Experimental Determination Of \Beta And \Gamma Critical Exponents In The Sol-Gel Phase Transition By Using Steady-State Fluorescence Technique, Y. Yilmaz, Ö. Pekcan Jan 1999

Experimental Determination Of \Beta And \Gamma Critical Exponents In The Sol-Gel Phase Transition By Using Steady-State Fluorescence Technique, Y. Yilmaz, Ö. Pekcan

Turkish Journal of Physics

The gelation of methyl methacrylate and ethylene glycol dimethacrylate was studied using the steady-state fluorescence technique. Samples with various crosslinker densities were prepared and sol-gel phase transitions were observed at various temperatures. Percolation theory was employed to interpret the results. For all samples the gel fraction and the average cluster size exponents, \beta and \gamma, were measured and found to be around 0.42 and 1.7 respectively. These values show excellent agreement with theoretical and simulation results.

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Studies On Extremal Segments In Random Sequences, Deniz Ertaş, Yacov Kantor Jan 1999

Studies On Extremal Segments In Random Sequences, Deniz Ertaş, Yacov Kantor

Turkish Journal of Physics

We review our main findings on the size distribution of the largest neutral segments in a sequence of N randomly charged monomers. Upon mapping to one--dimensional random walks (RWs), this corresponds to finding the probability distribution for the size L of the largest segment that returns to its starting position in an N--step RW. Using analytical, exact enumeration, and Monte Carlo methods, we reveal the complex structure of the probability distribution in the large N limit. In particular, the size of the longest neutral segment has a distribution with a square-root singularity at \ell\equiv L/N = 1, an essential singularity …

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Diverging Strains Near Threshold: Breakdown Of The Elastic Description Of A Charge Density Wave Model, Muhittin Mungan, Susan N. Coppersmith, Valeri M. Vinokur Jan 1999

Diverging Strains Near Threshold: Breakdown Of The Elastic Description Of A Charge Density Wave Model, Muhittin Mungan, Susan N. Coppersmith, Valeri M. Vinokur

Turkish Journal of Physics

We analyze the strains near threshold in 1-d charge density wave models at zero temperature and strong pinning. We show that in these models local strains diverge near the depinning threshold and characterize the scaling behavior of the phenomenon. This helps quantify when the underlying elastic description breaks down and plastic effects have to be included.

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Magnetic Excitations In Random Anisotropic Magnets, İbrahim Avgin Jan 1999

Magnetic Excitations In Random Anisotropic Magnets, İbrahim Avgin

Turkish Journal of Physics

A study is made for the magnetic excitations and their Anderson localization properties for a Heisenberg ferromagnet with random anisotropic fields. The system is assumed to be in a strong applied field so that complete spin alignment is established. The magnetic excitations, i.e., the harmonic spin waves, are computed using coherent-field-anisotropy approximation (a version of coherent potential approximation of the electronic problem). The spin wave shift and damping are calculated using the computed coherent field which is a complex function of energy approximating the random medium as a mean field level. The localizaton of the excitations are calculated by adopting …

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The Structure Of Liquid Alkali Metals Calculated By The Thermodynamic Perturbation Theory, H. Bi̇rtan Kavanoz, İdri̇s Gümüş Jan 1999

The Structure Of Liquid Alkali Metals Calculated By The Thermodynamic Perturbation Theory, H. Bi̇rtan Kavanoz, İdri̇s Gümüş

Turkish Journal of Physics

The structure of a hard sphere fluid has been calculated numerically via the Percus-Yevick (PY) and hypernetted-chain (HNC) closure relations and used as a reference system to calculate the structure of liquid alkali metals under the optimized random-phase approximation (ORPA) using the effective ion-ion pair potential formed by the Heine-Abarenkov (HA), and the empty-core (EC) pseudopotentials. The results are compared with experimental results. The calculations made by the reference system under the HNC closure relation are in better agreement with experimental results than those found under the PY closure relation.

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The Lattice Dynamics Of \Gamma-Iron, Kemal Çolakoğlu, G. Uğur, M. Çakmak, H. M. Tütüncü Jan 1999

The Lattice Dynamics Of \Gamma-Iron, Kemal Çolakoğlu, G. Uğur, M. Çakmak, H. M. Tütüncü

Turkish Journal of Physics

Lattice dynamical calculations are performed on \gamma-iron using the Clark-Gazis-Wallis (CGW) model to represent the ion-ion interactions, and a modified form of the Sharma-Joshi model to include ion-electron interactions. The theory is used to compute the phonon dispersion curves, frequency spectra and the lattice specific heat of \gamma-iron. The obtained results are in good agreement with the experimental findings, and are better than those calculated using the other theories.

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Determination Of Partial Coordinate Number Of Atoms In Amorphous Yb-As-S(Se, Te) Systems, Rasi̇m Ali̇-Zade, Eldar Efendi̇yev, Elman Haji̇yev Jan 1999

Determination Of Partial Coordinate Number Of Atoms In Amorphous Yb-As-S(Se, Te) Systems, Rasi̇m Ali̇-Zade, Eldar Efendi̇yev, Elman Haji̇yev

Turkish Journal of Physics

Partial coordinate number for amorphous compounds, consisting three type of atoms has been determined by way of calculation of the radial distribution curve maximum. The equation solution method has been used as algorithm in programme, which writed in FORTRAN language for working in IBM compatible computers. The programme is compact and integable. The programme has been used for determination partial coordinate number of ytterbium atom in amorphous compounds- YbAs_2S_4, Yb_3As_4S_9, YbAs_4Te_7, Yb_3As_4Se_9 YbAs_4Se_7. Real value of partial coordinate number of ytterbium in this compunds is 2 or 3.

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Heat Pulse Studies Of The Emission And Absorption Of Acoustic Phonons In Gaas Quantum Wells And Wires, A. J. Kent Jan 1999

Heat Pulse Studies Of The Emission And Absorption Of Acoustic Phonons In Gaas Quantum Wells And Wires, A. J. Kent

Turkish Journal of Physics

This paper reviews some recent experiments in which heat pulse techniques have been used to study the interaction of acoustic phonons with electrons in semiconductor quantum wells and wires. Heat pulse experiments provide temporal and spatial resolution of the phonons that are emitted or absorbed by the electrons and so give more detailed information about the electron-phonon interaction than can be obtained by other methods (e.g. transport measurements). Phonon experiments demonstrate clearly the effect of the electron confinement on the carrier-phonon interaction and the overall energy loss rate due to acoustic phonon emission. A qualitative explanation of the results is …

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Electron Transport In Gaas Quantum Wells: Effect Of Interface Roughness Scatterin, Rita Gupta Jan 1999

Electron Transport In Gaas Quantum Wells: Effect Of Interface Roughness Scatterin, Rita Gupta

Turkish Journal of Physics

The importance of interface roughness (IFR) scattering of electrons and LO-phonons for electron transport in semiconductor quantum wells is discussed. Modulation doping of quantum wells minimizes the effect of impurity scattering on the low-field electron mobility so that IFR scattering of electrons in the well becomes the major limiting factor. A model calculation of IFR scattering of electrons in quantum wells is presented and it is shown that (both)\Lambda and \Delta, the parameters defining IFR, can be estimated by comparing the theoretical and experimental electron mobilities. The application of high electric field leads to a distribution of hot electrons which …

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Well-Width Dependence Of Warm Electron Relaxation And Interface Roughness Scattering In Gaas/Ga_{1-X}Al_Xas Multiple Quantum Wells, M. Cankurtaran, H. Çeli̇k, E. Tiraş, A. Bayrakli, N. Balkan Jan 1999

Well-Width Dependence Of Warm Electron Relaxation And Interface Roughness Scattering In Gaas/Ga_{1-X}Al_Xas Multiple Quantum Wells, M. Cankurtaran, H. Çeli̇k, E. Tiraş, A. Bayrakli, N. Balkan

Turkish Journal of Physics

We review our recent results concerning the well-width dependence of the acoustic-phonon-assisted energy relaxation of two-dimensional (2D) warm electrons in modulation-doped GaAs/Ga_{1-x}Al_xAs multiple quantum wells. Electron energy-loss rates via the emission of acoustic phonons are determined from the amplitude of Shubnikov-de Haas (SdH) oscillations, measured as a function of lattice temperature and applied electric field. Experimental results are compared with the existing theoretical models that involve deformation-potential and screened and unscreened piezoelectric scattering. Well-width dependence of the quantum and transport mobilities of 2D electrons in the same samples have also been determined by measuring the quantum oscillations in both the …

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Large-Bandgap Semiconductors, B. K. Ridley Jan 1999

Large-Bandgap Semiconductors, B. K. Ridley

Turkish Journal of Physics

The general features of large-bandgap semiconductors that make them interesting for electronic and optoelectronic applications are briefly reviewed. The nitrides AIN, GaN and InN are singled out for a more focused treatment.

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Angular Dependence And Mode Distribution Of Acoustic Phonon Emission By Hot 2d Electrons In Gaas/Algaas Heterojunctions And Quantum Wells, Dietmar Lehmann, Czeslaw Jasiukiewicz Jan 1999

Angular Dependence And Mode Distribution Of Acoustic Phonon Emission By Hot 2d Electrons In Gaas/Algaas Heterojunctions And Quantum Wells, Dietmar Lehmann, Czeslaw Jasiukiewicz

Turkish Journal of Physics

We report a detailed theoretical study of the angular dependence and mode distribution of the acoustic phonon emission by hot two-dimensional electron gases in GaAs/AlGaAs heterojunctions and quantum wells and compare the results with some recent heat pulse measurements for carrier temperatures below 50 K. Common to all the experimental results was the strong dependence of the ratio of emitted longitudinal acoustic (LA) phonons to transverse acoustic (TA) phonons from the width of the quantum well and the absence of LA phonons propagating in a direction close to the 2DEG normal for GaAs/AlGaAs heterojunctions. To explain these phenomena and to …

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Modelling Of Devices For Optoelectronic Applications: The Quantum Confined Stark Effect And Self-Electrooptic Effect Devices, Eckehard Scholl Jan 1999

Modelling Of Devices For Optoelectronic Applications: The Quantum Confined Stark Effect And Self-Electrooptic Effect Devices, Eckehard Scholl

Turkish Journal of Physics

Electro-optical effects, such as the Franz-Keldysh effect in bulk materials or the quantum confined Stark effect in quantum well structures, lead to strong optoelectronic nonlinearities which form the basis for optical modulators and optically bistable devices. They result from a modification of the optical absorption properties by an applied electric field and are particularly pronounced in the case of low dimensional semiconductors. We review theoretical modelling and computer simulations of such optoelectronic devices in particular for ZnSe based quantum well structures, where excitonic features dominate even at room temperature. The field dependent absorption spectra are calculated by a many-body theory …

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Butt-Coupling Loss Of 0.1 Db/Interface In Inp/Ingaas Multi-Quantum-Well Waveguide-Waveguide Structures Grown By Selective Area Chemical Beam Epitaxy, C. A. Verschuren, M. R. Leys, H. Vonk, J. H. Wolter, P. J. Harmsma, Y. S. Oei Jan 1999

Butt-Coupling Loss Of 0.1 Db/Interface In Inp/Ingaas Multi-Quantum-Well Waveguide-Waveguide Structures Grown By Selective Area Chemical Beam Epitaxy, C. A. Verschuren, M. R. Leys, H. Vonk, J. H. Wolter, P. J. Harmsma, Y. S. Oei

Turkish Journal of Physics

The lateral coupling of waveguiding structures in both [011] and [0\bar{1}1] directions is studied using embedded selective area epitaxy by Chemical Beam Epitaxy. All growth steps are carried out under the same growth conditions on (100) lnP substrates misoriented by 0.5° towards (111)B. Both planar and selectively grown material exhibits bright luminescence and narrow PL line widths (8 meV FWHM at 4K), up to the lateral junction. Moreover, no degradation of the original material properties is observed after regrowth. SEM images show very flat layers and excellent lateral coupling for all four types of junctions. After reactive ion etching of …

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Silicon-Based Optoelectronics: Progress And Challenges, Tamim P. Sidiki, Clivia M. Sotomayor Torres Jan 1999

Silicon-Based Optoelectronics: Progress And Challenges, Tamim P. Sidiki, Clivia M. Sotomayor Torres

Turkish Journal of Physics

We review the status of silicon-based optoelectronics with emphasis on light emitting diodes. Erbium-doped Si, por-Si and silicon-based superlattices and nanostructures are discussed. The origin behind light emission in silicon with feature sizes below about 60 nm still remains poorly understood.

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3 \Mu M Intersubband Quantum Well Photodetector (Qwip), Rita Gupta, A. L. Y. Wong, S. K. Haywood Jan 1999

3 \Mu M Intersubband Quantum Well Photodetector (Qwip), Rita Gupta, A. L. Y. Wong, S. K. Haywood

Turkish Journal of Physics

In recent years photodetectors operating in the mid- to far infrared region of 3-15 \mu m have been designed based on electron and hole intersubband transitions in multiple quantum wells and superlattices. In general, QWIPs based on electron transitions show greater detectivity compared to the hole-based photodetectors. However, selection rules for electron intersubband transitions usually forbid the TE mode operation, associated with normal light incidence; Therefore, special coupling structures/geometries have been employed to couple light into the device. The spectral region 3-5 \mu m is of interest for a variety of applications such as environmental gas sensing, thermal imaging etc. …

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Hellish-Vcsel: A Hot Electron Laser, A. Obrien-Davies, N. Balkan, A. Boland-Thoms, M. J. Adams, J. Roberts Jan 1999

Hellish-Vcsel: A Hot Electron Laser, A. Obrien-Davies, N. Balkan, A. Boland-Thoms, M. J. Adams, J. Roberts

Turkish Journal of Physics

Hot Electron Light emission and Lasing In Semiconductor Heterostructures (HEL-LISH-1) is a novel hot electron surface emitter consisting of a GaAs QW on the n side of an Ga_{1-x}Al_xAs p-n junction. It utilises hot electron transport parallel to the junction plane. The injection of hot electron hole pairs into the QW is achieved via tunnelling and thermionic emission processes. Recently this structure has been modified by the incorporation of an upper and lower DBR defining a VCSEL (HELLISH-VCSEL). This has been shown to lase at room temperature with a Full Width at Half Maximum (FWHM) of 1.5 nm. In this …

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Single Si \Delta-Doped Gaas Investigations By New Photothermal Wavelength Modulated Photocurrent Technique, Fi̇kret Hajiev, Yener Özkan, M. Çeti̇n Arikan Jan 1999

Single Si \Delta-Doped Gaas Investigations By New Photothermal Wavelength Modulated Photocurrent Technique, Fi̇kret Hajiev, Yener Özkan, M. Çeti̇n Arikan

Turkish Journal of Physics

New Photothermal Wavelength Modulated Photocurrent (PWMPC) technique is reported. This technique is used for investigation of the MBE grown p-GaAs sample in which a single Si-layer was embedded with a \delta-type profile. Two spectral features were observed at 1.5137 eV and 1.5115 eV at 20 K. These peaks were attributed to the (D°,X) and (A°,X)-excitons bound to neutral donors and acceptors, respectively. We studied the temperature dependence of these excitonic peaks positions at temperatures between 20-90 K. Additionally, we demonstrate a blue shift of photocurrent spectra under a low level illumination intensity. PWMPC technique and the nature of the registered …

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Experimental Separation Of Phonon And Extrinsic Scattering In 2d Carrier Gases In Gaas, F. F. Ouali, H. R. Francis, H. C. Rhodes Jan 1999

Experimental Separation Of Phonon And Extrinsic Scattering In 2d Carrier Gases In Gaas, F. F. Ouali, H. R. Francis, H. C. Rhodes

Turkish Journal of Physics

A new method which separates phonon scattering from extrinsic scattering in 2D gases in GaAs is presented. In contrast to previous ones, the technique makes no assumptions about the temperature dependence of the extrinsic scattering. The preliminary measurements of the phonon limited mobility \mu_{ph} on two electron gas samples show a Bloch-Grüneisen regime in the temperature range 1.2-4.5K and the results agree reasonably well with other experimental and theoretical work.

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Stability Of Quasi-Two-Dimensional Bipolarons, R. Tuğrul Senger, Ati̇lla Erçelebi̇ Jan 1999

Stability Of Quasi-Two-Dimensional Bipolarons, R. Tuğrul Senger, Ati̇lla Erçelebi̇

Turkish Journal of Physics

The stability criteria of quasi-two-dimensional dimensional bipolarons have been studied within the framework of strong coupling and path-integral theories. It is shown that the critical values of the electron-phonon coupling constant (\alpha), and the ratio of dielectric constants (\eta = \epsilon_{\infty}/\epsilon_{0}) exhibit some non-trivial features as the effective dimensionality is tuned from three to two.

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Wigner Crystalization In Semiconductor Quantum Wires, I. Al-Hayek, B. Tanatar, M. Tomak Jan 1999

Wigner Crystalization In Semiconductor Quantum Wires, I. Al-Hayek, B. Tanatar, M. Tomak

Turkish Journal of Physics

We study the Wigner crystallization in semiconductor quantum wires within the density functional approach. As the density of electrons in quasi-one-dimensional structures is lowered, we find that the system favors the crystalline phase as envisioned by Wigner.

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The Effect Of Non-Equilibrium Acoustic Phonons On The Tunnel Current In Gaas/Alas Superlattices, S. A. Cavill, F. F. Ouali, L. J. Challis, A. J. Kent, M. Henini, A. V. Akimov Jan 1999

The Effect Of Non-Equilibrium Acoustic Phonons On The Tunnel Current In Gaas/Alas Superlattices, S. A. Cavill, F. F. Ouali, L. J. Challis, A. J. Kent, M. Henini, A. V. Akimov

Turkish Journal of Physics

We present the first study of the effect of ballistic acoustic phonons generated by a heated metal film on the tunnel current in GaAs/AlAs superlattices. The phonon-induced increase of the tunnel current as a function of applied voltage has a maximum at a voltage that varies linearly with heater temperature both in zero and applied magnetic field. The behaviour is consistent with phonon-assisted tunnelling by stimulated phonon emission. The system acts as a phonon spectrometer in the < 1THz frequency region with a resolution of approximately 200 GHz.

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Optimisation Of The Tunable Wavelength Hot Electron Light Emitter, Ali̇ Teke, Naci̇ Balkan Jan 1999

Optimisation Of The Tunable Wavelength Hot Electron Light Emitter, Ali̇ Teke, Naci̇ Balkan

Turkish Journal of Physics

We report on the optimization of the hot electron tunable wavelength surface light emitting device developed by us. The device consists of a p-GaAs, and n-Ga_{1-x}Al_xAs heterojunction containing an inversion layer on the p- side, and GaAs quantum wells on the n- side, and is referred to as HELLISH-2 (Hot Electron Light Emitting and Lasing in Semiconductor Heterojunction). The device utilises hot electron longitudinal transport and, therefore, light emission is independent of the polarity of the applied voltage. In order to optimise the operation of the device a theoretical model that calculates the tunnelling and the thermionic components of the …

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Binding Energies Of Excitons In Symmetric And Asymmetric Coupled Double-Quantum Well Structures In A Magnetic Field, Esi̇n Kasapoğlu, Hüseyi̇n Sari, Yüksel Ergün, Sezai̇ Elagöz, Naci̇ Balkan, İsmai̇l Sökmen Jan 1999

Binding Energies Of Excitons In Symmetric And Asymmetric Coupled Double-Quantum Well Structures In A Magnetic Field, Esi̇n Kasapoğlu, Hüseyi̇n Sari, Yüksel Ergün, Sezai̇ Elagöz, Naci̇ Balkan, İsmai̇l Sökmen

Turkish Journal of Physics

The binding energy of excitons in the symmetric and asymmetric coupled double GaAs/Ga_{1-x}Al_xAs quantum wells is calculated by using variational approach. Results have been obtained as a function of the potential symmetry, the size of the quantum well, and the coupling parameter of the wells in the presence of a magnetic field applied parallel to the growth direction. The role of the asymmetric barriers, magnetic field, barrier and well width in determining the tunability of the excitonic binding parameters of the GaAs/Ga_{1-x}Al_xAs system is discussed.

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An Investigation Of Electrical Properties Of Porous Silicon, G. Algün, M. Ç. Arikan Jan 1999

An Investigation Of Electrical Properties Of Porous Silicon, G. Algün, M. Ç. Arikan

Turkish Journal of Physics

In this work, electrical properties of porous silicon structures, formed with electrochemical anodization in HF acid solution under two different current densities, were investigated. In these experiments, Sb doped (111)-oriented n-type silicon samples with 0.006-0.015 \Omega cm resistivity was used. Samples were anodized in a solution of 38% HF and 99% C_2H_2OH at 1:1 ratio for 15 minutes. After anodization, the structures that formed at low current density (J = 5 mA/cm^2) was compared with structures that formed at high current density (J = 30 mA/cm^2). Both structures and electrical properties were investigated.

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